PART |
Description |
Maker |
M27V800-150XM1TR M27V800 M27V800-100B1TR M27V800-1 |
NND - 8 MBIT (1MB X8 OR 512KB X16) LOW VOLTAGE UV EPROM AND OTP EPROM 8 Mbit 1Mb x8 or 512Kb x16 Low Voltage UV EPROM and OTP EPROM 8兆x812KB的x16低压紫外线可擦写可编程只读存储器和OTP存储 512 Kbit 64Kb x8 Low Voltage UV EPROM and OTP EPROM
|
SGS Thomson Microelectronics STMicroelectronics N.V. 意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
|
M29W800B M29W800B100M1R M29W800B100M1TR M29W800B10 |
8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory 8 Mbit (1Mb x8 or 512Kb x16, Boot Block)Low Voltage Single Supply Flash Memory From old datasheet system
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
|
M29W800DB90N1 |
8 MBIT (1MB X8 OR 512KB X16, BOOT BLOCK) 3V SUPPLY FLASH MEMORY
|
SGS Thomson Microelectronics
|
M29W800DB |
8 MBIT (1MB X8 OR 512KB X16, BOOT BLOCK) 3V SUPPLY FLASH MEMORY 8 MBIT (1MB X8 OR 512KB X16, BOOT BLOCK) 3V SUPPLY FLASH MEMORY
|
ST Microelectronics STMicroelectronics
|
M29F800AB90M1 M29F800AB90N1 |
8 MBIT (1MB X8 OR 512KB X16, BOOT BLOCK) SINGLE SUPPLY FLASH MEMORY
|
SGS Thomson Microelectronics
|
M29F800AB70N1 M29F800AB70N6 M29F800AB70M1 |
8 MBIT (1MB X8 OR 512KB X16, BOOT BLOCK) SINGLE SUPPLY FLASH MEMORY
|
ST Microelectronics
|
M29F800DB70M1E |
8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory
|
STMicroelectronics
|
MPC2105A MPC2106ASG66 MPC2105B |
(MPC2105x / MPC2106x) 512KB and 1MB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms 512KB and 1MB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms 128K X 72 CACHE TAG SRAM MODULE, 9 ns, DMA178 512KB and 1MB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms 512KBMB的二级缓存模块BurstRAM为PowerPC制备/ CH旺平
|
Motorola, Inc. Motorola Mobility Holdings, Inc.
|
M36W0R6030T0ZAQ M36W0R6030B0ZAQ M36W0R6030B0 M36W0 |
64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package
|
http:// STMicroelectronics
|
M27V801 |
8Mbit (1Mb x 8) Low Voltage UV EPROM and OTP EPROM(8M位低压可紫外擦除EPROM和一次可编程EPROM)
|
意法半导
|
M36W216BI70ZA1T M36W216TI70ZA1T M36W216TI85ZA1T M3 |
16 Mbit 1Mb x16, Boot Block Flash Memory and 2 Mbit 128Kb x16 SRAM, Multiple Memory Product 16 MBIT (1MB X16, BOOT BLOCK) FLASH MEMORY AND 2 MBIT (128K X16) SRAM, MULTIPLE MEMORY PRODUCT 16 Mbit 1Mb x16 / Boot Block Flash Memory and 2 Mbit 128Kb x16 SRAM / Multiple Memory Product
|
ST Microelectronics
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